D1031SH45TS02是一款钳位二极管，主要用于IGCT和压接式IGBT的并联保护。
D1031SH45TS02二极管的主要参数包括：
反向电压（VDRM/VRRM）：4500V
平均整流电流（Io）：1740A
正向电压（Vf）：在2500A时为4.3V
恢复时间：>500ns
封装形式：DO-200AE
D1031SH45TS02二极管还具有坚固且密封的陶瓷外壳，外壳直径为120mm，高度为26mm。
The D1031SH45TS02 is a clamp diode designed for parallel protection of IGCT and crimped IGBT.
The main parameters of the D1031SH45TS02 diode include:
Reverse voltage (VDRM/VRRM) : 4500V
Average rectified current (Io) : 1740A
Forward voltage (Vf) : 4.3V at 2500A
Recovery time: >500ns
Package form: DO-200AE
The D1031SH45TS02 diode also has a robust and sealed ceramic housing with a diameter of 120mm and a height of 26mm.
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