KUC711AE01 3BHB004661R0001 励磁系统

产品参数
型号:KUC711AE01
编号:3BHB004661R0001
额定电压:100-240V AC
额定电流:2.5A
额定功率:300W
工作温度:-20℃C至50℃C
存储温度:-40℃C至85°C
电力体系部:电力体系部为世界各地的输配电网络和发电厂供给全套体系和服务，重点是变电站和变电站自动控制体系。此外，该部分还供给灵活交流输电体系(FACTS)和高压直流(HVDC)输电体系以及电网管理体系。在发电事务范畴，电力体系部供给仪表产品以及电厂控制和辅助设备。
离散自动化与运动控制部:离散自动化与运动控制部供给帮助客户进步出产功率和动力功率的产品、解决方案和相关服务，其电机、发电机、传动体系、可编程逻辑控制器、电力电子和机器人产品能够广泛应用于电力、运动和控制等自动化范畴。该事务部分在风力发电机职业具有领导地位，在太阳能范畴的产品线也日益丰厚，这将进一步促进离散自动化与运动控制部在工业范畴现有技术、途径和运营渠道的发展,半导体:门极可关断开关晶闸管(GTOS)、压触型二极管模块、绝缘栅双极晶体管(IGBD及二极管芯片、绝缘栅双极晶体管(IGBT)及二极管模块、晶闸管、集成门极换向晶闸管(IGCT)、Si

Product parameter

Model :KUC711AE01

Number :3BHB004661R0001

Rated voltage :100-240V AC

Rated current :2.5A

Rated power :300W

Operating temperature :-20℃C to 50℃C

Storage temperature :-40 °C to 85°C

Power Systems: The Power Systems Division supplies a full range of systems and services to transmission and distribution networks and power plants around the world, with a focus on substations and substation automatic control systems. In addition, this segment provides Flexible AC transmission systems (FACTS) and high voltage direct current (HVDC) transmission systems, as well as grid management systems. In the Power generation business, the Power Systems Division supplies instrumentation products as well as power plant control and auxiliary equipment.

Discrete Automation and Motion Control: The Discrete Automation and Motion Control Division provides products, solutions and related services to help customers improve the production power and power output. Its motors, generators, transmission systems, programmable logic controllers, power electronics and robotics products are widely used in the automation fields of power, motion and control. The business segment has a leadership position in the wind turbine industry and a growing portfolio in the solar energy category, This will further promote the development of D&M's existing technologies, approaches and operating channels in the industrial area, Semiconductors: GTOS, pressure-contact diode modules, insulated-gate bipolar transistors (IGBDs and diode chips, insulated-gate bipolar transistors (IGBTs) and diode modules, thyristors, integrated gate commutators Thyristor (IGCT), Si